High-resolution infrared study of the neutralization of silicon donors in gallium arsenide

B. Pajot, R. C. Newman, R. Murray, +3

Physical review. B, Condensed matter

Deuterium Plasma PassivationEngineeringChemistrySilicon On InsulatorSpectroscopic Property +16

Experimental study of the hydrogen complexes in indium phosphide

R. Darwich, B. Pajot, B. Rose, +5

Physical review. B, Condensed matter

Inorganic ChemistryEngineeringPhysicsH AtomNatural Sciences +11

A new determination of N/sub A/

Giuseppe Basile, Peter Becker, A. Bergamin, +16

IEEE Transactions on Instrumentation and Measurement

N/sub A/Molar MassEngineeringPhysicsSubstructural Logic +8

Quantitative Spectroscopy of Interstitial Oxygen in Silicon

B. Pajot, H. J. Stein, B. Calès, +1

Journal of The Electrochemical Society

EngineeringAbsorption SpectroscopyCm−1 BandChemistryCm−1 Bands +15

Spectroscopic studies of 450° C thermal donors in silicon

B. Pajot, Hubert Compain, Jocelyn Lerouille, +1

Physica B+C

C Thermal DonorsEngineeringThermal TransportApplied PhysicsThermodynamics +2

The passivation of Be acceptors in GaAs by exposure to a hydrogen plasma

P. S. Nandhra, R.C. Newman, R. Murray, +4

Semiconductor Science and Technology

EngineeringPlasma PhysicsDipole MomentChemistrySpectroscopic Property +20

Interstitial oxygen in germanium and silicon

Emilio Artacho, Félix Ynduráin, B. Pajot, +5

Physical review. B, Condensed matter

EngineeringPhysicsNatural SciencesIntrinsic ImpurityApplied Physics +12

Spectroscopic evidence for the hydrogen passivation of zinc acceptors in gallium arsenide

B. Pajot, Abdul Jalil, J. Chevallier, +1

Semiconductor Science and Technology

Ii-vi SemiconductorHydrogen PassivationGallium SitesEngineeringPhysics +12

Spectroscopic evidence for hydrogen-phosphorus pairing in zinc-doped InP containing hydrogen

B. Pajot, J. Chevallier, Abdul Jalil, +1

Semiconductor Science and Technology

EngineeringSolid-state ChemistryChemistryElectronic Excited StateSpectroscopic Property +15

Hydrogen diffusion and acceptor passivation in <i>p</i>-type GaAs

R. Rahbi, B. Pajot, J. Chevallier, +3

Journal of Applied Physics

SemiconductorsIi-vi SemiconductorSemiconductor TechnologyGroup IiEngineering +13