Applied Physics Letters · 1998 · 21 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsTransport PhenomenaCarrier TransportChemical Vapor DepositionDopingSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsCarrier Transport In SemiconductorsCarrier Transport MechanismsDoping In NanostructuresElectrical Transport PropertiesElectron Transport In SemiconductorsSemiconductor ConductivityTransport In HeterostructuresTransport In Semiconductors
Electron transport properties of double delta-doped GaAs structures based on high electron mobility single delta-doped layers with a sheet concentration of 3×1012 cm−2 have been investigated for spacer thicknesses up to 1100 Å at 77 and 300 K. At an optimized spacer thickness of about 200 Å, a maximum in conductivity is observed, which exceeds the conductivity of a single delta-doped layer with the same total concentration by 30% and 20% at 300 and 77 K. The mobility and concentration as a function of spacer thickness are also presented and analyzed.
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Electron mobility enhancement from coupled wells in delta-doped GaAs
X. Zheng, T. K. Carns, K. L. Wang et al. · Applied Physics Letters · 1993 · 90 citations