Applied Physics Letters · 1993 · 90 citations · 6 references
EngineeringElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportElectronic Band StructureQuantum Hall PhysicsQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsCarrier Transport In Quantum WellsCarrier Transport In SemiconductorsCarrier Transport MechanismsElectron MobilityElectron Transport In SemiconductorsTemperature DependenceTransport In Quantum WellsTransport In Semiconductors
It is found that when two Si delta (δ) doped wells in GaAs are placed in close proximity to one another, the electron Hall mobility is enhanced two to five times over that of the single well case. The temperature dependence of the mobility is also reported. Samples with a variety of spacer widths have been studied. Our theoretical and experimental data show that the excited subbands in the double well structure have significant carrier densities located in the undoped region where Coulombic scattering is reduced, and are thus found to play an important role in the observed mobility behavior.
6
Nonparabolicity and warping in the conduction band of GaAs
Solid State Communications · 1984 · 255 citations
Experimental and theoretical mobility of electrons in δ-doped GaAs
G. B. Gillman, B. Vinter, E. Barbier et al. · Applied Physics Letters · 1988 · 50 citations