T. K. Carns

Electron mobility enhancement from coupled wells in delta-doped GaAs

X. Zheng, T. K. Carns, K. L. Wang et al. · Applied Physics Letters · 1993 · 90 citations

Engineering, Electrical Engineering, Physics +17

Damage and strain in epitaxial Ge<i>x</i>Si1−<i>x</i> films irradiated with Si

Donald Y.C. Lie, A. Vantomme, F. H. Eisen et al. · Journal of Applied Physics · 1993 · 54 citations

Engineering, Materials Engineering, Materials Science +16

Hole mobility measurements in heavily doped Si/sub 1-x/Ge/sub x/ strained layers

T. K. Carns, Sang Kook Chun, M. O. Tanner et al. · IEEE Transactions on Electron Devices · 1994 · 48 citations

Engineering, Materials Science, Physics +17

Selective Etching of SiGe on SiGe / Si Heterostructures

Gee‐Kung Chang, T. K. Carns, S. S. Rhee et al. · Journal of The Electrochemical Society · 1991 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

SiGe resonant tunneling hot-carrier transistor

S. S. Rhee, Gee‐Kung Chang, T. K. Carns et al. · Applied Physics Letters · 1990 · 20 citations

Engineering, Electrical Engineering, Electronic Materials +16