M. O. Tanner - Concepedia

Author

M. O. Tanner

University of California, Los Angeles

Also Known As

M Tanner, M. O. Tanner, M. Tanner, M.O. Tanner, Martin O Tanner, Martin O. Tanner

Publications

512

Citations

H-Index

Concepts

All Affiliations

University of California, Los Angeles RWTH Aachen University California Institute of Technology HRL Laboratories (United States)Georgia State University

About

M. O. Tanner is an author at University of California, Los Angeles specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	483
2	Applied Physics	12	13	470
3	Electrical Engineering	7	7	191
4	Chemical Engineering	1	1	85
5	Chemistry	1	1	85

M. O. Tanner

Publications

494

Citations

H-Index

Page 1

	Year	Citations
Chemical Etching of Si1 − x Ge x in HF : H 2 O 2 : CH 3 COOH T. K., M. O. Tanner, K. L Wang Journal of The Electrochemical Society Materials ScienceMaterials EngineeringChemical EngineeringChemical EtchingEngineering	1995	85
Normal-incidence strained-layer superlattice Ge0.5Si0.5/Si photodiodes near 1.3 μm Fengyi Huang, Xin Zhu, M. O. Tanner, Applied Physics Letters Semiconductor TechnologyPhotonicsElectrical EngineeringOptical MaterialsEngineering	1995	58
Alignment of Ge three-dimensional islands on faceted Si(001) surfaces Kunihiro Sakamoto, Hirofumi Matsuhata, M. O. Tanner, Thin Solid Films EngineeringPhysicsSurface AnalysisSurface ScienceApplied Physics	1998	52
High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate Fengyi Huang, M. Chu, M. O. Tanner, Applied Physics Letters Materials ScienceComplete Strain RelaxationSemiconductor TechnologyEngineeringCrystalline Defects	2000	51
SiGe band engineering for MOS, CMOS and quantum effect devices K. L. Wang, Shawn Thomas, M. O. Tanner Journal of Materials Science Materials in Electronics Electrical EngineeringEngineeringPhysicsNanoelectronicsElectronic Engineering	1995	48
Hole mobility measurements in heavily doped Si/sub 1-x/Ge/sub x/ strained layers T. K. Carns, Sang Kook Chun, M. O. Tanner, IEEE Transactions on Electron Devices Materials ScienceSemiconductorsHole Mobility MeasurementsEpitaxial GrowthEngineering	1994	48
Demonstration of Si homojunction far-infrared detectors A. G. U. Perera, Wei Shen, H. C. Liu, Applied Physics Letters SemiconductorsPhotonicsElectrical EngineeringElectronic DevicesSi Fir Detectors	1998	31
Relaxed Si1−xGex films with reduced dislocation densities grown by molecular beam epitaxy M. O. Tanner, Michael Chu, Kang L. Wang, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringDislocation InteractionApplied Physics	1995	24
Photoluminescence and X-ray characterization of relaxed Si1 − xGex alloys grown on silicon on insulator (SOI) and implanted SOI substrates Michael Chu, M. O. Tanner, Fengyi Huang, Journal of Crystal Growth Materials ScienceIon ImplantationEngineeringApplied PhysicsSemiconductor Device Fabrication	1997	22
Far-infrared free-hole absorption in epitaxial silicon films for homojunction detectors A. G. U. Perera, Wen Shen, William Mallard, Applied Physics Letters Hiwip DetectorsOptical MaterialsEngineeringOptoelectronic DevicesIntegrated Circuits	1997	15

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