A III–V nanowire channel on silicon for high-performance vertical transistors

Tunnel field-effect transistors as energy-efficient electronic switches

Adrian M. Ionescu, Heike Riel · Nature · 2011 · 2.9K citations · Full text

Electrical Engineering, Engineering, Tunneling Microscopy +3

Nanometre-scale electronics with III–V compound semiconductors

Jesús A. del Alamo · Nature · 2011 · 1.6K citations

Semiconductors, Semiconductor Technology, Electrical Engineering +7

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

Alan Seabaugh, Qin Zhang · Proceedings of the IEEE · 2010 · 1.6K citations

Device Modeling, Beyond Cmos Logic, Electrical Engineering +12

On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

S. Takagi, Akira Toriumi, M. Iwase et al. · IEEE Transactions on Electron Devices · 1994 · 1.5K citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge · Nature · 2011 · 992 citations

Semiconductor Technology, Electrical Engineering, Engineering +6