Nanometre-scale electronics with III–V compound semiconductors

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge · Nature · 2011 · 1K citations

Engineering, Electrical Engineering, Materials Science +13

Unified defect model and beyond

W. E. Spicer, I. Lindau, Perry Skeath et al. · Journal of Vacuum Science and Technology · 1980 · 646 citations

Natural Sciences, Materials Science, Physics +17

High performance fully-depleted tri-gate CMOS transistors

B.S. Doyle, Suman Datta, M. Doczy et al. · IEEE Electron Device Letters · 2003 · 453 citations

Engineering, Electrical Engineering, Microelectronics +15

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia et al. · Nature · 2010 · 412 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Integrated nanoelectronics for the future

R. Chau, B.S. Doyle, Suman Datta et al. · Nature Materials · 2007 · 407 citations

Engineering, Electrical Engineering, Materials Science +10