Masatoshi Yoshimura

A III–V nanowire channel on silicon for high-performance vertical transistors

Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui · Nature · 2012 · 710 citations

Engineering, Electrical Engineering, Materials Science +14

Steep-slope tunnel field-effect transistors using III–V nanowire/Si heterojunction

Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui · 2012 · 160 citations

Engineering, Electrical Engineering, Materials Science +17

Sub 60 mV/decade Switch Using an InAs Nanowire–Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique

Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui · Nano Letters · 2013 · 65 citations

Engineering, Electrical Engineering, Materials Science +17

Carbon–Carbon Bond Formation by Ligand‐free Cross‐Coupling Reaction Using Palladium Catalyst Supported on Synthetic Adsorbent

Yasunari Monguchi, Keita Sakai, Koichi Endo et al. · ChemCatChem · 2012 · 60 citations

Natural Sciences, Chemical Engineering, Chemistry +17

A Highly Active Heterogeneous Palladium Catalyst Supported on a Synthetic Adsorbent

Yasunari Monguchi, Yuki Fujita, Koichi Endo et al. · Chemistry - A European Journal · 2008 · 46 citations

Natural Sciences, Chemical Engineering, Chemistry +15