Continuum based modeling of silicon integrated circuit processing: An object oriented approach

General Relationship for the Thermal Oxidation of Silicon

B. E. Deal, Andrew S. Grove · Journal of Applied Physics · 1965 · 3.4K citations

Engineering, Oxidation Resistance, Chemistry +16

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 536 citations

Semiconductors, Engineering, Crystalline Defects +12

An Unsymmetric-Pattern Multifrontal Method for Sparse LU Factorization

Timothy A. Davis, Iain Duff · SIAM Journal on Matrix Analysis and Applications · 1997 · 511 citations

Numerical Analysis, Dense Matrix Kernels, Computational Science +15

Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides

Dah-Bin Kao, J.P. McVittie, William D. Nix et al. · IEEE Transactions on Electron Devices · 1988 · 376 citations

Stress Effects, Engineering, Oxidation Resistance +24

Two-dimensional thermal oxidation of silicon—I. Experiments

Dah-Bin Kao, J.P. McVittie, William D. Nix et al. · IEEE Transactions on Electron Devices · 1987 · 205 citations