On the electromigration failure under pulsed conditions

Abstract

Pulsed electromigration experiments on a series of Al-1% Si test stripes deposited on 0.5 μm SiO2 have been performed applying a frequency of 10 kHz and various duty cycles. A model was developed which takes the intermittent cooling of the metallization and a partial backstreaming of the vacancies during off times into consideration. Experiments and calculations both show an enhanced lifetime and are in good agreement for the conditions examined.