MBE growth of GaN pn-junction photodetector on AlN/Si(111) substrate with Ni/Ag as ohmic contact

Metal-semiconductor contacts

M. Pepper · Physics in Technology · 1974 · 1.1K citations

Spatial distribution of the luminescence in GaN thin films

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Natural Sciences, Materials Engineering, Materials Science +17

Schottky barrier detectors on GaN for visible–blind ultraviolet detection

Q. Chen, Jinhong Yang, A. Osinsky et al. · Applied Physics Letters · 1997 · 296 citations

Engineering, Materials Engineering, Materials Science +16

Analysis of deep levels in <i>n</i>-type GaN by transient capacitance methods

Peter Hacke, Theeradetch Detchprohm, K. Hiramatsu et al. · Journal of Applied Physics · 1994 · 289 citations

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High-performance GaN p-n junction photodetectors for solar ultraviolet applications

E. Monroy, E. Muñoz, F.J. Sánchez et al. · Semiconductor Science and Technology · 1998 · 223 citations

Engineering, Electrical Engineering, Materials Science +17