MOVPE and characterization of InAsN/GaAs multiple quantum wells

Metalorganic vapor phase epitaxy of GaP1−<i>x</i>N<i>x</i> alloys on GaP

S Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe et al. · Applied Physics Letters · 1993 · 98 citations

Natural Sciences, Materials Engineering, Materials Science +15

Band Gap Reduction in InAsN Alloys

Ding-Kang Shih, Hao-Hsiung Lin, Li-Wei Sung et al. · Japanese Journal of Applied Physics · 2003 · 69 citations

Natural Sciences, Materials Science, Physics +17

MOCVD growth of InAsN for infrared applications

H. Naoi, Yoshiki Naoi, Shiro Sakai · Solid-State Electronics · 1997 · 67 citations

Engineering, Materials Engineering, Materials Science +12

Hall effect measurement of InAsN alloy films grown directly on GaAs(001) substrates by RF‐MBE

Masayuki Kuroda, Ryuji Katayama, S. Nishio et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 23 citations

Natural Sciences, Materials Science, Physics +17

MOCVD Growth of InNxAs1?x on GaAs Using Dimethylhydrazine

A. A. El-Emawy, Huiping Cao, E. Zhmayev et al. · physica status solidi (b) · 2001 · 16 citations

Engineering, Materials Engineering, Materials Science +17