Current-voltage characteristics of thin film and bulk diamond treated in hydrogen plasma

Abstract

It is shown that the electrical properties of thin film and bulk diamond can be systematically altered by hydrogen plasma treatment under controlled conditions. The concentration of electrically active hydrogen introduced in diamond can be determined from the current-voltage characteristics of hydrogenated samples containing traps. Hydrogen passivation of deep traps in diamond is clearly demonstrated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>