Observation of lifetime controlling recombination centres in silicon power devices

A correlation method for semiconductor transient signal measurements

G. L. Miller, J. V. Ramirez, D. A. Robinson · Journal of Applied Physics · 1975 · 151 citations

Engineering, Electrical Engineering, Physics +13

Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique

J.A. Pals · Solid-State Electronics · 1974 · 151 citations

Natural Sciences, Materials Science, Physics +14

The electron capture cross section and energy level of the gold acceptor center in silicon

S. D. Brotherton, J. Bicknell · Journal of Applied Physics · 1978 · 72 citations

Natural Sciences, Materials Science, Physics +17

Quenched-in centers in silicon p+n junctions

L.D. Yau, C. T. Sah · Solid-State Electronics · 1974 · 72 citations

Natural Sciences, Materials Science, Physics +13

On the post-injection voltage decay of p-s-n rectifiers at high injection levels

Heinrich Schlangenotto, W. Gerlach · Solid-State Electronics · 1972 · 57 citations

Engineering, Electrical Engineering, Circuit Theory +6