Heinrich Schlangenotto

Temperature dependence of the radiative recombination coefficient in silicon

Heinrich Schlangenotto, H. Maeder, W. Gerlach · physica status solidi (a) · 1974 · 145 citations

Semiconductors, Engineering, Physics +11

On the effective carrier lifetime in p-s-n rectifiers at high injection levels

Heinrich Schlangenotto, W. Gerlach · Solid-State Electronics · 1969 · 92 citations

Electrical Engineering, Engineering, Effective Carrier Lifetime +5

On the radiative recombination rate in silicon

W. Gerlach, Heinrich Schlangenotto, H. Maeder · physica status solidi (a) · 1972 · 85 citations

Semiconductors, Semiconductor Technology, Ion Implantation +12

Improved recovery of fast power diodes with self-adjusting p emitter efficiency

Heinrich Schlangenotto, J. Serafin, F. Sawitzki et al. · IEEE Electron Device Letters · 1989 · 77 citations

Electrical Engineering, Semiconductor Device, Engineering +13

On the post-injection voltage decay of p-s-n rectifiers at high injection levels

Heinrich Schlangenotto, W. Gerlach · Solid-State Electronics · 1972 · 57 citations

Electrical Engineering, Engineering, P-s-n Rectifiers +3