Deep levels of vacancy-hydrogen centers in silicon studied by Laplace DLTS

Electron-irradiation-induced divacancy in lightly doped silicon

A. O. Evwaraye, Edmund Sun · Journal of Applied Physics · 1976 · 232 citations

Engineering, Materials Engineering, Materials Science +17

Laplace transform deep-level transient spectroscopic studies of defects in semiconductors

L. Dobaczewski, P. Kaczor, I.D. Hawkins et al. · Journal of Applied Physics · 1994 · 193 citations

Natural Sciences, Materials Science, Semiconductor Materials +16

On the role of defect charge state in the stability of point defects in silicon

Lionel C. Kimerling, H. M. Deangelis, J. W. Diebold · Solid State Communications · 1975 · 107 citations

Natural Sciences, Materials Science, Physics +14

Transformation of deep-level spectrum of irradiated silicon due to hydrogenation under wet chemical etching

O. V. Feklisova, Nikolai Yarykin · Semiconductor Science and Technology · 1997 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +17

Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR

B. Bech Nielsen, P. Johannesen, Peter Stallinga et al. · Physical Review Letters · 1997 · 70 citations

Natural Sciences, Materials Science, Physics +16