A. O. Evwaraye - Concepedia

Author

A. O. Evwaraye

Wright-Patterson Air Force Base

Also Known As

A. O. Evwaraye, A.O. Evwaraye, Andrew Evwaraye, Andrew O. Evwaraye

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Wright-Patterson Air Force Base General Electric (United States)University of Dayton United States Air Force Research Laboratory Cree (China)

About

A. O. Evwaraye is an author at Wright-Patterson Air Force Base specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	27	1K
2	Applied Physics	19	28	1.1K
3	Electrical Engineering	13	14	469
4	Natural Sciences	3	3	65
5	Medicine	1	1	79

A. O. Evwaraye

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Electron-irradiation-induced divacancy in lightly doped silicon A. O. Evwaraye, Edmund Sun Journal of Applied Physics Materials ScienceElectron-irradiation-induced DivacancyActivation EnergyElectron Traps—a2Engineering	1976	231
Determination of interface and bulk-trap states of IGFET’s using deep-level transient spectroscopy K. L. Wang, A. O. Evwaraye Journal of Applied Physics EngineeringBulk-trap StatesIntegrated CircuitsBand GapSemiconductor Device	1976	79
The Dominant Recombination Centers in Electron‐Irradiated Semiconductors Devices A. O. Evwaraye, B. Jayant Baliga Journal of The Electrochemical Society EngineeringSilicon On InsulatorDefect ToleranceSemiconductor DeviceSemiconductors	1977	69
Electron-irradiation damage in antimony-doped silicon A. O. Evwaraye Journal of Applied Physics SemiconductorsSemiconductor TechnologySemiconductor DeviceEngineeringElectron Trapping Centers	1977	57
Fermi level control and deep levels in semi-insulating 4H–SiC W. C. Mitchel, R. Perrin, Jonathan T. Goldstein, Journal of Applied Physics SemiconductorsOptical Absorption MeasurementsElectrical EngineeringSemiconductor TechnologyEngineering	1999	56
Electrical properties of platinum in silicon as determined by deep-level transient spectroscopy A. O. Evwaraye, Edmund Sun Journal of Applied Physics SemiconductorsDeep-level Transient SpectroscopyElectrical EngineeringIi-vi SemiconductorEngineering	1976	54
Shallow and deep levels in <i>n</i>-type 4H-SiC A. O. Evwaraye, Steven R. Smith, W. C. Mitchel Journal of Applied Physics SemiconductorsNitrogen LevelsSemiconductor TechnologyDeep LevelsEngineering	1996	47
Annealing of irradiation-induced defects in arsenic-doped silicon A. O. Evwaraye Journal of Applied Physics SemiconductorsDeep-level Transient SpectroscopySemiconductor TechnologyElectronic DevicesEngineering	1977	41
DLTS Measurements of Trapping Defects in High Purity Germanium A. O. Evwaraye, R. N. Hall, T. J. Soltys IEEE Transactions on Nuclear Science Materials ScienceMaterials EngineeringCu ContaminationEngineeringPhysics	1979	34
Determination of the band offsets of the 4H–SiC/6H–SiC heterojunction using the vanadium donor (0/+) level as a reference A. O. Evwaraye, S. R. Smith, W. C. Mitchel Applied Physics Letters Optical MaterialsEngineeringVanadium DonorOptical CharacterizationSemiconductors	1995	31

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