O. V. Feklisova

Transformation of deep-level spectrum of irradiated silicon due to hydrogenation under wet chemical etching

O. V. Feklisova, Nikolai Yarykin · Semiconductor Science and Technology · 1997 · 73 citations

Engineering, Irradiation Dose, Silicon On Insulator +16

On the nature of hydrogen-related centers in p-type irradiated silicon

O. V. Feklisova, Nikolai Yarykin, E. B. Yakimov et al. · Physica B Condensed Matter · 2001 · 30 citations

Engineering, Physics, Hydrogen Transition +9

Annealing effect on the electrical activity of extended defects in plastically deformed p‐Si with low dislocation density

O. V. Feklisova, B. Pichaud, E. B. Yakimov · physica status solidi (a) · 2005 · 29 citations

Materials Science, Semiconductors, Electrical Engineering +13

Hydrogen penetration into silicon during wet-chemical etching

J. Weber, S. Knack, O. V. Feklisova et al. · Microelectronic Engineering · 2003 · 24 citations

Engineering, Microfabrication, Surface Science +8

Contribution of the disturbed dislocation slip planes to the electrical properties of plastically deformed silicon

O. V. Feklisova, E. B. Yakimov, Nikolai Yarykin · Physica B Condensed Matter · 2003 · 23 citations

Electrical Engineering, Engineering, Dislocation Interaction +13