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Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

Evgenia V. Kalinina, G. Kholuyanov, V. Kossov, R. R. Yafaev, Gerhard Pensl, Sergey A. Reshanov, Andrey O. Konstantinov, Anders Hallén

Materials science forum · 2003 · 13 citations · 4 references

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Metal Precipitates in Silicon <i>p-n</i> Junctions

A. Goetzberger, W. Shockley · Journal of Applied Physics · 1960 · 271 citations

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Gettering of gold and copper with implanted carbon in silicon

Hiu Yung Wong, N.W. Cheung, Paul K. Chu · Applied Physics Letters · 1988 · 94 citations

, , +6

Gettering rates of various fast-diffusing metal impurities at ion-damaged layers on silicon

T.M. Buck, K.A. Pickar, J. M. Poate et al. · Applied Physics Letters · 1972 · 85 citations

, , +16

High-dose Al-implanted 4H-SiC p+-n-n+ junctions

E. V. Kalinina, G. Kholujanov, Anatoly M. Strel’chuk et al. · Applied Physics Letters · 2000 · 20 citations

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