G. Kholuyanov

High Energy Resolution Detectors Based on 4H-SiC

Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov et al. · Materials science forum · 2005 · 20 citations

Semiconductor Technology, Electrical Engineering, Engineering +13

Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers

E. V. Kalinina, G. Kholuyanov, D. V. Davydov et al. · Semiconductors · 2003 · 19 citations

Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

E. V. Kalinina, G. Kholuyanov, Grigory Onushkin et al. · Semiconductors · 2004 · 19 citations

Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

Evgenia V. Kalinina, G. Kholuyanov, V. Kossov et al. · Materials science forum · 2003 · 13 citations

Materials Engineering, Materials Science, Aluminium Nitride +6

High-resolution short range ion detectors based on 4H-SiC films

E. V. Kalinina, Andrey O. Konstantinov, Grigory Onushkin et al. · Technical Physics Letters · 2004 · 13 citations