Numerical simulation of the gallium nitride thin film layer grown on 6-inch wafer by commercial multi-wafer hydride vapor phase epitaxy

Complex flow phenomena in MOCVD reactors

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Electrical Engineering, Engineering, Fluid Mechanics +3

Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides

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Chemical Thermodynamics, Thermodynamic Study, Engineering +10

Combined ab initio quantum chemistry and computational fluid dynamics calculations for prediction of gallium nitride growth

Debasis Sengupta, Sandip Mazumder, William Kuykendall et al. · Journal of Crystal Growth · 2005 · 79 citations

Engineering, Physics, Natural Sciences +9

Novel approach to simulation of group-III nitrides growth by MOVPE

S. Yu. Karpov, V. G. Prokofyev, E.V. Yakovlev et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 72 citations · Full text

Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor

E.V. Yakovlev, S. Yu. Karpov, Yu.N. Makarov et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 58 citations · Full text