IEEE Transactions on Electron Devices · 1988 · 41 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsDefects In Electronic MaterialsDevice ReliabilityOxide SemiconductorsSemiconductor Device MaterialsSemiconductor ReliabilitySemiconductor Thin FilmsBreakdown CharacteristicsCarrier InjectionDefect DensityDielectric BreakdownHot Carrier InjectionLong-term Device ReliabilityNitridationThin Oxide Films
The short- and long-term reliability of thin nitrided oxide (oxynitride) films is studied. Tests conducted on several oxynitride films fabricated under various nitridation conditions show that (1) the defect density of thin (5-nm) oxynitride film is very low; (2) oxynitride MISFETs exhibit less transconductance degradation due to hot-carrier injection than oxide MISFETs; (3) these thin films have superior time-dependent dielectric breakdown characteristics; and (4) the electron traps in oxynitride film are drastically reduced by annealing in an O/sub 2/ gas atmosphere.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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