Applied Physics Letters · 1986 · 49 citations · 6 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsIii-v SemiconductorsSemiconductor HeterostructuresSemiconductor PhysicsThin Film StrainTwo-dimensional SemiconductorsWide-bandgap SemiconductorsQuantum Well HeterostructuresStrain EffectsStrain Effects On Electronic PropertiesStrained Layer StructuresStrained-layer HeterostructuresTransport In HeterostructuresTwo-dimensional Semiconductor Heterostructures
The two-dimensional, strain-induced light-hole masses in InGaAs strained-layer superlattices are shown to have large nonparabolicity contributions. Calculated hole masses agree with experimental values to within the 20% scatter. The results indicate that these tailorable hole masses could be useful tools for studying two-dimensional valence transport.
6
Gallium Arsenide and Related Compounds
Bob Wilson · Physics Bulletin · 1973 · 694 citations
Natural Sciences, Chemistry, Physics +10