Electron and hole effective masses for two-dimensional transport in strained-layer superlattices

Valence-Band Parameters in Cubic Semiconductors

P. Lawaetz · Physical review. B, Solid state · 1971 · 1.1K citations

Natural Sciences, Materials Science, Physics +17

Ge<i>x</i>Si1−<i>x</i>/Si strained-layer superlattice grown by molecular beam epitaxy

J. C. Bean, L. C. Feldman, A. T. Fiory et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1984 · 676 citations

Engineering, Materials Engineering, Materials Science +17

Defects in epitaxial multilayers

J. W. Matthews, A. E. Blakeslee · Journal of Crystal Growth · 1976 · 594 citations

Natural Sciences, Materials Science, Physics +12

Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAs

M. Chandrasekhar, Fred H. Pollak · Physical review. B, Solid state · 1977 · 367 citations

Natural Sciences, Materials Science, Physics +17

InAsSb strained-layer superlattices for long wavelength detector applications

G. C. Osbourn · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 175 citations

Engineering, Materials Science, Physics +17