Light-hole conduction in InGaAs/GaAs strained-layer superlattices

Abstract

We report the first observation of light-hole band carriers in In0.2Ga0.8As/GaAs strained-layer superlattices by direct measurements of their effective mass (m*mo=0.14) using oscillatory magnetoresistance data. Preferential population of light-hole states, due to splitting of the degenerate bulk valence bands by built-in strain, allows this direct observation.