J. E. Schirber

Light-hole conduction in InGaAs/GaAs strained-layer superlattices

J. E. Schirber, I. J. Fritz, L. R. Dawson · Applied Physics Letters · 1985 · 110 citations

Engineering, Physics, Oscillatory Magnetoresistance Data +9

<i>p</i>-channel, strained quantum well, field-effect transistor

T. J. Drummond, T. E. Zipperian, I. J. Fritz et al. · Applied Physics Letters · 1986 · 73 citations

Semiconductor Technology, Electrical Engineering, Light-hole Mass +8

GaAs/(In,Ga)As, <i>p</i>-channel, multiple strained quantum well field-effect transistors with high transconductance and high peak saturated drain current

T. E. Zipperian, L. R. Dawson, T. J. Drummond et al. · Applied Physics Letters · 1988 · 56 citations

Wide-bandgap Semiconductor, Engineering, Field-effect Transistors +16

Magneto-optic determination of the light-hole effective masses in InGaAs/GaAs strained-layer superlattices

E. D. Jones, Harro Ackermann, J. E. Schirber et al. · Solid State Communications · 1985 · 50 citations

Wide-bandgap Semiconductor, Photonics, Engineering +8

Large valence-band nonparabolicity and tailorable hole masses in strained-layer superlattices

G. C. Osbourn, J. E. Schirber, T. J. Drummond et al. · Applied Physics Letters · 1986 · 49 citations

Materials Science, Strain-induced Light-hole Masses, Engineering +11