Growth temperature effects on In Ga1−N films studied by X-ray and photoluminescence

Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

Yukio Narukawa, Yoichi Kawakami, Mitsuru Funato et al. · Applied Physics Letters · 1997 · 925 citations

Engineering, Materials Engineering, Materials Science +17

Luminescences from localized states in InGaN epilayers

Shigefusa F. Chichibu, T. Azuhata, T. Sota et al. · Applied Physics Letters · 1997 · 405 citations

Engineering, Materials Engineering, Materials Science +15

Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy

Naoto Yoshimoto, Takashi Matsuoka, T. Sasaki et al. · Applied Physics Letters · 1991 · 253 citations · Full text

Engineering, Materials Engineering, Materials Science +15

III–V nitride based light-emitting devices

Shuji Nakamura · Solid State Communications · 1997 · 222 citations

Natural Sciences, Materials Engineering, Materials Science +14

Growth and characterization of bulk InGaN films and quantum wells

S. Keller, B.P. Keller, D. Kapolnek et al. · Applied Physics Letters · 1996 · 160 citations

Engineering, Materials Engineering, Materials Science +17