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Single-Event Effects in Silicon Carbide Power Devices
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2015
Year
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Electrical EngineeringEngineeringPower DeviceApplied PhysicsSingle-event EffectsHeavy-ion Single-event EffectSingle Event EffectsPower Semiconductor DeviceExample Nasa ProgramsSemiconductor Device FabricationNasa Electronic PartsPower ElectronicsTechnologyMicroelectronicsCarbidePower Electronic Devices
This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.