Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode

Abstract

We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was fabricated using a low-thermal-budget process that achieved low contact resistivity, high on-current density of 8 MA/cm2 and low off-current density of 100 A/cm2. The improvement in the properties of poly-Si diode makes the set/reset operation of the cross-point 4F2 cell possible, leading to the size reduction of phase change memory chip.