Kenzo Kurotsuchi - Concepedia

Author

Kenzo Kurotsuchi

Hitachi (Japan)

Also Known As

H. Moriya, K. Kurotsuchi, Kenzo Kurotsuchi

Publications

259

Citations

H-Index

Concepts

All Affiliations

Hitachi (Japan)Renesas Electronics (Japan)

About

Kenzo Kurotsuchi is an author at Hitachi (Japan) specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	138
2	Electrical Engineering	6	6	138
3	Computer Engineering	5	5	117
4	Applied Physics	4	4	112
5	Materials Engineering	2	2	50

Kenzo Kurotsuchi

Publications

195

Citations

H-Index

Page 1

	Year	Citations
Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode Y. Sasago, M. Kinoshita, Takahiro Morikawa, Symposium on VLSI Technology	2006	35
A GeSbTe phase-change memory cell featuring a tungsten heater electrode for low-power, highly stable, and short-read-cycle operations N. Takaura, Motoyasu Terao, Kenzo Kurotsuchi, Electrical EngineeringEngineeringNanoelectronicsGesbte CellApplied Physics	2004	33
Oxygen-doped gesbte phase-change memory cells featuring 1.5 V/100-&#x03BC;A standard 0.13&#x03BC;m CMOS operations N. Matsuzaki, Kenzo Kurotsuchi, Y. Matsui, EngineeringEmerging Memory TechnologyOxygen-doped GesbteA Standard 0.13Phase Change Memory	2006	29
Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories Y. Matsui, Kenzo Kurotsuchi, Osamu Tonomura, EngineeringComputer ArchitectureHeat InsulatorPhase-change MemoriesPhase Change Memory	2006	29
Characterization of In<sub>20</sub>Ge<sub>15</sub>Sb<sub>10</sub>Te<sub>55</sub> Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention Takahiro Morikawa, Kenzo Kurotsuchi, Yoshihisa Fujisaki, Japanese Journal of Applied Physics Phase TransitionsEngineeringEmerging Memory TechnologyPhase Change MemorySb 10	2012	21
Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming gigabyte-per-second throughput Y. Sasago, M. Kinoshita, Hiroyuki Minemura, Symposium on VLSI Technology Non-volatile MemoryEngineeringMemory DesignEmerging Memory TechnologyPoly-si Mos Transistor	2011	13
Phase change RAM operated with 1.5-V CMOS as low cost embedded memory Kensuke Osada, T. Kawahara, R. Takemura, Non-volatile MemoryElectrical EngineeringEngineeringVlsi DesignRead Retention Time	2006	13
2.8-GB/s-write and 670-MB/s-erase operations of a 3D vertical chain-cell-type phase-change-memory array Kenzo Kurotsuchi, Y. Sasago, Hiroshi Yoshitake,	2015	12
bunji at SemEval-2017 Task 3: Combination of Neural Similarity Features and Comment Plausibility Features Yuta Koreeda, Takuya Hashito, Yoshiki Niwa,	2017	10

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