Kenzo Kurotsuchi

Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode

Y. Sasago, M. Kinoshita, Takahiro Morikawa et al. · Symposium on VLSI Technology · 2006 · 35 citations

A GeSbTe phase-change memory cell featuring a tungsten heater electrode for low-power, highly stable, and short-read-cycle operations

N. Takaura, Motoyasu Terao, Kenzo Kurotsuchi et al. · 2004 · 33 citations

Electrical Engineering, Engineering, Nanoelectronics +13

Oxygen-doped gesbte phase-change memory cells featuring 1.5 V/100-μA standard 0.13μm CMOS operations

N. Matsuzaki, Kenzo Kurotsuchi, Y. Matsui et al. · 2006 · 29 citations

Engineering, Emerging Memory Technology, Oxygen-doped Gesbte +16

Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories

Y. Matsui, Kenzo Kurotsuchi, Osamu Tonomura et al. · 2006 · 29 citations

Engineering, Computer Architecture, Heat Insulator +17

Characterization of In₂₀Ge₁₅Sb₁₀Te₅₅ Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention

Takahiro Morikawa, Kenzo Kurotsuchi, Yoshihisa Fujisaki et al. · Japanese Journal of Applied Physics · 2012 · 21 citations

Phase Transitions, Engineering, Emerging Memory Technology +16