N. Matsuzaki

A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference Scheme

R. Takemura, T. Kawahara, K. Miura et al. · IEEE Journal of Solid-State Circuits · 2010 · 125 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 1.5-V full-swing BiCMOS logic circuit

M. Hiraki, K. Uano, Masataka Minami et al. · IEEE Journal of Solid-State Circuits · 1992 · 57 citations

Engineering, Electrical Engineering, Microelectronics +16

Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention

Takahiro Morikawa, Hirokazu Moriya, Tomio Iwasaki et al. · 2007 · 39 citations

Engineering, Materials Engineering, Materials Science +17

A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current

S. Hanzawa, N. Kitai, Kensuke Osada et al. · 2007 · 31 citations

Engineering, Computer Engineering, Electrical Engineering +17

Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories

Y. Matsui, Kenzo Kurotsuchi, Osamu Tonomura et al. · 2006 · 30 citations

Engineering, Materials Engineering, Materials Science +16