Takahiro Morikawa - Concepedia

Author

Takahiro Morikawa

Hitachi (Japan)

Also Known As

Morikawa, Takahiro, T Morikawa, T. Morikawa, Takahiro MORIKAWA, Takahiro Morikawa

Publications

470

Citations

H-Index

Concepts

All Affiliations

Hitachi (Japan)University of Tsukuba Photonics Electronics Technology Research Association National Institute of Advanced Industrial Science and Technology

About

Takahiro Morikawa is an author at Hitachi (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	332
2	Applied Physics	11	11	322
3	Electrical Engineering	10	11	319
4	Computer Engineering	5	5	167
5	Materials Engineering	2	2	113

Takahiro Morikawa

Publications

402

Citations

H-Index

Page 1

	Year	Citations
Electrical Phase-Change Memory: Fundamentals and State of the Art Motoyasu Terao, Takahiro Morikawa, Takeo Ohta Japanese Journal of Applied Physics Electrical ResistanceNon-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric Random-access Memory	2009	92
Analysis of Degradation Phenomena in Bipolar Degradation Screening Process for SiC-MOSFETs Takashi Ishigaki, Tatsunori Murata, Koyo Kinoshita, Electrical EngineeringEngineeringDegradation PhenomenaMosfet StructurePower Device	2019	47
Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention Takahiro Morikawa Non-volatile MemoryEngineeringEmerging Memory TechnologyPhase Change MemoryNanoelectronics	2007	38
Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode Y. Sasago, M. Kinoshita, Takahiro Morikawa, Symposium on VLSI Technology	2006	35
Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories Y. Matsui, Kenzo Kurotsuchi, Osamu Tonomura, EngineeringComputer ArchitectureHeat InsulatorPhase-change MemoriesPhase Change Memory	2006	29
Charge-injection phase change memory with high-quality GeTe/Sb<inf>2</inf>Te<inf>3</inf> superlattice featuring 70-&#x03BC;A RESET, 10-ns SET and 100M endurance cycles operations Takasumi Ohyanagi, N. Takaura, M. Tai, Superconducting MaterialEngineeringEmerging Memory TechnologyEndurance Cycles OperationsSuperlattice Structure	2013	23
Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices Takasumi Ohyanagi, N. Takaura, Masahito Kitamura, Japanese Journal of Applied Physics EngineeringSuperlattice StructurePhase Change MemoryNanoelectronicsBack End	2013	22
Characterization of In<sub>20</sub>Ge<sub>15</sub>Sb<sub>10</sub>Te<sub>55</sub> Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention Takahiro Morikawa, Kenzo Kurotsuchi, Yoshihisa Fujisaki, Japanese Journal of Applied Physics Phase TransitionsEngineeringEmerging Memory TechnologyPhase Change MemorySb 10	2012	21
A low power phase change memory using low thermal conductive doped-Ge<inf>2</inf>Sb<inf>2</inf>Te <inf>5</inf> with nano-crystalline structure Takahiro Morikawa, K. Akita, Takasumi Ohyanagi, EngineeringEmerging Memory TechnologyPhase Change MemorySemiconductorsNanoelectronics	2012	14
1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb<inf>2</inf>Te<inf>3</inf> super-lattice films M. Tai, Takasumi Ohyanagi, M. Kinoshita,	2014	14

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