2002 · 32 citations · 4 references
EngineeringComputer EngineeringComputer ScienceComputer ArchitectureLow-power DesignMicroelectronicsMemory DevicesMemory HierarchyMemory Hierarchy DesignMemory Subsystem DesignFlash MemoryFlash Memory DevicesFlash Memory StorageMemory CapacityMemory Cell DesignMemory Storage CapacityStorage CapacityThreshold Voltage
A flash memory with multilevel cell significantly reduces the memory per-bit cost. A 32 Mb multilevel-cell (MLC) flash memory storing two bits of data per cell achieves 32 Mb memory storage capacity using 16 M flash memory cells. This 32 Mb flash memory on a 0.6 /spl mu/m process has a 2.0/spl times/1.8 /spl mu/m/sup 2/ flash cell. In MLC operation, the logical flash memory cell achieves two bits per cell using four possible states, defined by four flash cell threshold voltage ranges. The relationship between the threshold voltage ranges stored in the first memory cell and the corresponding logic levels is shown in this paper, which also shows a plot of the four threshold voltage distributions, each with a separation range.
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A 60ns 16Mb Flash EEPROM With Program And Erase Sequence Controller
T. Nakayama, S. Kobayashi, Y. Miyawaki et al. · 1991 · 17 citations
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