Journal of Applied Physics · 1974 · 60 citations · 22 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsDopingLaser PhysicsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsBarrier LayersDoping ControlDouble Heterostructure DevicesDouble HeterostructuresHeterostructure LasersLattice MismatchValence BandValence Band Structure
Maintenance of higher doping levels in the AlxGa1−xAs barrier layers of double-heterostructure lasers permits one to use smaller molar fractions x, thereby minimizing the lattice mismatch between AlxGa1−xAs and GaAs. We estimate conduction-band and valence-band parameters of AlxGa1−xAs and show the relationship between laser threshold current and doping level.
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JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
I. Hayashi, M. B. Panish, P. W. Foy et al. · Applied Physics Letters · 1970 · 591 citations
Electron Mobility in Direct-Gap Polar Semiconductors
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Electron Transport in InSb, InAs, and InP
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