Applied Physics Letters · 2009 · 20 citations · 15 references
Lens Shaped StructureOptical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsRoom-temperature ElectroluminescenceSemiconductor NanostructuresSemiconductorsElectronic DevicesQd StructuresMolecular Beam EpitaxyInas/in0.1ga0.9as Quantum DotsCompound SemiconductorMaterials ScienceSemiconductor TechnologyPhotoluminescencePhysicsOptoelectronic MaterialsStructural CharacteristicsApplied PhysicsQuantum Photonic DeviceGraded Si1−xgex/si SubstrateOptoelectronics
We studied the electroluminescence and structural characteristics of five-layer stacked self-assembled InAs/In0.1Ga0.9As quantum dot (QD) structures grown on graded Si1−xGex/Si substrate. The QD was found to take on a lens shaped structure with aspect ratio of 0.23±0.05. Room-temperature electroluminescence at 1.29 μm was observed from the QD structures. The external quantum efficiency as function of injected current was investigated and the dominant carrier recombination processes were identified from analysis of the current-optical power relationship.
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1.3 μm photoluminescence from InGaAs quantum dots on GaAs
Richard P. Mirin, J. P. Ibbetson, Kenichi Nishi et al. · Applied Physics Letters · 1995 · 245 citations