Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots

Abstract

Data are presented characterizing the spectral emission and the electroluminescence efficiency dependence on growth conditions of 1.3 μm wavelength InGaAs/GaAs quantum dots. We show that highly efficient 1.3 μm room temperature electroluminescence can be achieved with only ten total deposited monolayers with an averaged In content of 50%. Atomic force microscopy shows that the 1.3 μm wavelength quantum dots form with a density of ∼1.3×1010 cm−2.