Applied Physics Letters · 2009 · 57 citations · 12 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportNanoelectronicsQuantum WellsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsCarrier Transport In Quantum WellsElectron DensityHall Effect MeasurementsInsulated-gate Field-effect TransistorsQuantum Well HeterostructuresTransport In HeterostructuresTransport In Quantum WellsTwo-dimensional Electron Gases
We report the observation of a two-dimensional electron gas (2DEG) in a Si quantum well with mobility 1.6×106 cm2/Vs at carrier densities n≥1.5×1011/cm2. The 2DEG, which resides in an undoped Si/SiGe heterostructure, is capacitively induced using an insulated-gate field-effect transistor (IGFET) device structure; its mobility is determined from transport and quantum Hall effect measurements at 0.3 K. Our IGFET device makes it now possible to access by transport experiments the low electron density regime down to n∼1×1010/cm2.
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High-mobility Si and Ge structures
F. Schäffler · Semiconductor Science and Technology · 1997 · 765 citations
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
P.D. Ye, G. D. Wilk, J. Kwo et al. · IEEE Electron Device Letters · 2003 · 245 citations