Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-growth

Miscibility gaps in quaternary III/V alloys

G. B. Stringfellow · Journal of Crystal Growth · 1982 · 338 citations

Natural Sciences, Materials Engineering, Materials Science +12

Composition modulation in liquid phase epitaxial In<i>x</i>Ga1−<i>x</i>As<i>y</i>P1−<i>y</i> layers lattice matched to InP substrates

P. Hénoc, A. Izraël, M. Quillec et al. · Applied Physics Letters · 1982 · 185 citations · Full text

Natural Sciences, Materials Science, Physics +13

High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers

D. Z. Garbuzov, N.Y. Antonishkis, A. D. Bondarev et al. · IEEE Journal of Quantum Electronics · 1991 · 155 citations

Engineering, Electrical Engineering, Materials Science +16

Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation

Kentaro Onabe · Japanese Journal of Applied Physics · 1982 · 135 citations

Natural Sciences, Materials Engineering, Materials Science +8

Microstructures of (In,Ga)P alloys grown on GaAs by metalorganic vapor-phase epitaxy

D. M. Follstaedt, Richard Schneider, E. D. Jones · Journal of Applied Physics · 1995 · 61 citations

Natural Sciences, Materials Science, Physics +17