D. Z. Garbuzov

High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers

D. Z. Garbuzov, N.Y. Antonishkis, A. D. Bondarev et al. · IEEE Journal of Quantum Electronics · 1991 · 155 citations

Productivity, Photonics, Electrical Engineering +13

Generation of electrically wavelength tunable (Δλ= 40 nm) singlemodelaser pulses from a 1.3 µm Fabry-Perot laser by self-seedingin a fibre-optic configuration

D. Huhse, Martin Schell, J. Kaessner et al. · Electronics Letters · 1994 · 46 citations

Dark-line-resistant, aluminum-free diode laser at 0.8 mu m

S.L. Yellen, Allan H. Shepard, C.M. Harding et al. · IEEE Photonics Technology Letters · 1992 · 44 citations

Quantum Science, Photonics, Engineering +10

Reradiation effects, lifetimes and probabilities of band-to-band transitions in direct A3B5 compounds of GaAs type

D. Z. Garbuzov · Journal of Luminescence · 1982 · 41 citations

Electrical Engineering, Engineering, Physics +8

InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition

J. Diaz, I. Eliashevich, K. Mobarhan et al. · IEEE Photonics Technology Letters · 1994 · 39 citations

Engineering, Differential Efficiency, Laser Applications +19