Modelling and simulation of power MOSFETs and power diodes

Abstract

A model of a power MOSFET has been improved and implemented in SPICE. A method for parameter extraction from electrical measurements has been developed. The model is simple and accurate, and the simulation results show good agreement with the measurements. The switching behavior of the MOSFETs has been simulated and analyzed, and the parasitic oscillation in parallel circuits has been investigated. A way to avoid this undesirable effect is proposed and proved. The development of an electrical analysis model for the p-i-n power diode is reported. The internal processes during switching have been investigated using physical device simulation, and a one-dimensional solution has been obtained.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>