Applied Physics Letters · 2000 · 42 citations · 10 references
Selective RegrowthWide-bandgap SemiconductorAluminium NitrideEngineeringOptoelectronic DevicesChemistryPhotoelectrochemistrySemiconductorsElectronic DevicesMaterials ScienceTensile StrainElectrical EngineeringDifferential ResistancePhotochemistryOptoelectronic MaterialsAluminum Gallium NitridePhotoelectric MeasurementPhotochromismSelective-area Regrown DevicesApplied PhysicsOptoelectronics
We report on the device performance of selective-area regrown Al0.30Ga0.70N p–i–n photodiodes. Tensile strain, induced by the lattice mismatch between AlxGa1−xN and GaN, leads to cracking above the critical thickness in layers with high aluminum concentration. Selective-area regrown devices with ⩽70 μm diameters were fabricated without signs of cracking. These devices show low dark current densities with flat photoresponse and a forward turn-on current of ∼25 A/cm2 at 7 V. A quantum efficiency greater than 20% was achieved at zero bias with a peak wavelength of λ=315 nm. A differential resistance of R0=3.46×1014 Ω and a detectivity of D*=4.85×1013 cm Hz1/2 W−1 was demonstrated.
10
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 730 citations
Semiconductor Technology, Photonics, Electrical Engineering +12
Solar-blind AlGaN photodiodes with very low cutoff wavelength
D. Walker, V. Kumar, K. Mi et al. · Applied Physics Letters · 2000 · 171 citations