S. R. Lee - Concepedia

Author

S. R. Lee

Sandia National Laboratories ORCID

Also Known As

S R Lee, S. R. Lee, S.R. Lee, S. R. Lee

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Sandia National Laboratories National Renewable Energy Laboratory Sandia National Laboratories California Arizona State University University of Illinois Urbana-Champaign

About

S. R. Lee is an author at Sandia National Laboratories specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	18	1K
2	Applied Physics	12	17	988
3	Materials Science	11	14	953
4	Materials Engineering	3	3	177
5	Electrical Engineering	1	1	12

S. R. Lee

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Real-time stress evolution during Si1-xGex Heteroepitaxy: Dislocations, islanding, and segregation Jerrold A. Floro, Eric Chason, S. R. Lee, Journal of Electronic Materials Materials ScienceEngineeringSevere Plastic DeformationStrain LocalizationDislocation Interaction	1997	163
Strain relaxation in AlGaN multilayer structures by inclined dislocations D. M. Follstaedt, S. R. Lee, Andrew A. Allerman, Journal of Applied Physics Materials ScienceEngineeringSevere Plastic DeformationCrystalline DefectsStrain Localization	2009	151
Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures Sean Hearne, Jung Han, S. R. Lee, Applied Physics Letters Materials ScienceMaterials EngineeringCritical ThicknessWide-bandgap SemiconductorEngineering	2000	121
Precipitation and relaxation in strained Si1−<i>y</i>C<i>y</i>/Si heterostructures J. Strane, H. J. Stein, S. R. Lee, Journal of Applied Physics SemiconductorsMaterials ScienceEpitaxial GrowthEngineeringCrystalline Defects	1994	119
<i>In situ</i> measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures S. R. Lee, Daniel Koleske, Karen Charlene Cross, Applied Physics Letters Materials ScienceCritical ThicknessBrittle FractureEngineeringDislocation Interaction	2004	118
X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffers J.A. Olsen, Evelyn L. Hu, S. R. Lee, Journal of Applied Physics SemiconductorsMaterials ScienceEngineeringDislocation InteractionPhysics	1996	73
Demonstration of an InAsSb strained-layer superlattice photodiode S. R. Kurtz, L. R. Dawson, T. E. Zipperian, Applied Physics Letters	1988	51
Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces Jacob Gruber, Xiaowang Zhou, Reese E. Jones, Journal of Applied Physics	2017	47
Characterizing composition modulations in InAs/AlAs short-period superlattices R. D. Twesten, D. M. Follstaedt, S. R. Lee, Physical review. B, Condensed matter Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringPhysics	1999	46
Strain-dependent morphology of spontaneous lateral composition modulations in (AlAs)m(InAs)n short-period superlattices grown by molecular beam epitaxy Andrew G. Norman, S. P. Ahrenkiel, Helio Moutinho, Applied Physics Letters EngineeringGlobal StrainSemiconductor NanostructuresQuantum MaterialsMolecular Beam Epitaxy	1998	45

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