J. Strane

Metastable SiGeC formation by solid phase epitaxy

J. Strane, H. J. Stein, S. R. Lee et al. · Applied Physics Letters · 1993 · 130 citations

Materials Science, Diamond-like Carbon, Fourier Transform +12

Precipitation and relaxation in strained Si1−<i>y</i>C<i>y</i>/Si heterostructures

J. Strane, H. J. Stein, S. R. Lee et al. · Journal of Applied Physics · 1994 · 119 citations

Semiconductors, Materials Science, Epitaxial Growth +12

Electron irradiation damage in oxides

M. I. Buckett, J. Strane, David E. Luzzi et al. · Ultramicroscopy · 1989 · 67 citations

Electron Irradiation Damage, Radiation Effect, Applied Physics

High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

E. Leobandung, H. Nayakama, D. Mocuta et al. · 2005 · 65 citations

Electrical Engineering, Engineering, Vlsi Design +15

Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy

J. Strane, S. R. Lee, H. J. Stein et al. · Journal of Applied Physics · 1996 · 65 citations

Materials Science, Ion Implantation, Equilibrium Solubility +14