Karen Charlene Cross

Author

Sandia National Laboratories

Also Known As

K. C. Cross, K. Cross, K.C. Cross, Karen C. Cross, Karen Charlene Cross, Karen Cross, Karen Waldrip, Tanya Henry

Publications

876

Citations

H-Index

Concepts

All Affiliations

Sandia National Laboratories University of New Mexico Sandia National Laboratories California Center for Integrated Nanotechnologies University of Essex

About

Karen Charlene Cross is an author at Sandia National Laboratories specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	825
2	Applied Physics	13	13	825
3	Electrical Engineering	6	6	402
4	Chemical Engineering	1	1	40
5	Materials Engineering	1	1	15

Karen Charlene Cross

Publications

847

Citations

H-Index

Page 1

	Year	Citations
Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays Qiming Li, Karl Westlake, Mary H. Crawford, Optics Express Optical MaterialsEngineeringOptical PerformanceDiode ArraysNanoelectronics	2011	190
Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence Daniel Koleske, A. J. Fischer, Andrew A. Allerman, Applied Physics Letters EngineeringGan FilmsNanoelectronicsMaterials ScienceElectrical Engineering	2002	127
<i>In situ</i> measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures S. R. Lee, Daniel Koleske, Karen Charlene Cross, Applied Physics Letters Materials ScienceCritical ThicknessBrittle FractureEngineeringDislocation Interaction	2004	118
Single-mode lasing of GaN nanowire-pairs Huiwen Xu, Jeremy B. Wright, Ting-Shan Luk, Applied Physics Letters PhotonicsSingle-mode LasingEngineeringPhysicsCoupled Cavity	2012	72
Plan-view image contrast of dislocations in GaN D. M. Follstaedt, Nancy A. Missert, Daniel Koleske, Applied Physics Letters Materials SciencePlan-view Image ContrastImage AnalysisEngineeringCrystalline Defects	2003	70
Understanding GaN nucleation layer evolution on sapphire Daniel Koleske, Michael E. Coltrin, Karen Charlene Cross, Journal of Crystal Growth EngineeringPhysicsApplied PhysicsCondensed Matter PhysicsGan Power Device	2004	58
<i>In situ</i> measurements of GaN nucleation layer decompostion Daniel Koleske, Michael E. Coltrin, Andrew A. Allerman, Applied Physics Letters Materials ScienceNh3 FlowChemical EngineeringGan Nucleation LayerEngineering	2003	40
Connection between GaN and InGaN growth mechanisms and surface morphology Daniel Koleske, S. R. Lee, Mary H. Crawford, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorEngineeringSurface ScienceApplied Physics	2014	39
Gold substrate-induced single-mode lasing of GaN nanowires Huiwen Xu, Jeremy B. Wright, Antonio Hurtado, Applied Physics Letters PlasmonicsElectrical EngineeringPhotonicsGold FilmEngineering	2012	37
Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes Mary Ann Miller, Mary H. Crawford, Andrew A. Allerman, Journal of Electronic Materials PhotonicsAdvanced Laser ProcessingEngineeringVertical Facet FormationApplied Physics	2009	26

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