Karen Charlene Cross

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

Qiming Li, Karl Westlake, Mary H. Crawford et al. · Optics Express · 2011 · 190 citations · Full text

Optical Materials, Engineering, Optical Performance +19

Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

Daniel Koleske, A. J. Fischer, Andrew A. Allerman et al. · Applied Physics Letters · 2002 · 127 citations

Engineering, Gan Films, Nanoelectronics +16

<i>In situ</i> measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures

S. R. Lee, Daniel Koleske, Karen Charlene Cross et al. · Applied Physics Letters · 2004 · 118 citations

Materials Science, Critical Thickness, Brittle Fracture +15

Single-mode lasing of GaN nanowire-pairs

Huiwen Xu, Jeremy B. Wright, Ting-Shan Luk et al. · Applied Physics Letters · 2012 · 72 citations · Full text

Photonics, Single-mode Lasing, Engineering +12

Plan-view image contrast of dislocations in GaN

D. M. Follstaedt, Nancy A. Missert, Daniel Koleske et al. · Applied Physics Letters · 2003 · 70 citations

Materials Science, Plan-view Image Contrast, Image Analysis +14