C. J. Collins

Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiode

C. J. Collins, U. Chowdhury, M.M. Wong et al. · Applied Physics Letters · 2002 · 129 citations

Aluminium Nitride, Engineering, Large Differential Resistance +16

GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

J. Limb, Dongwon Yoo, Jae‐Hyun Ryou et al. · Applied Physics Letters · 2006 · 108 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Substrates +11

Back illuminated AlGaN solar-blind photodetectors

Damien Lambert, M.M. Wong, U. Chowdhury et al. · Applied Physics Letters · 2000 · 86 citations

Materials Science, Semiconductors, Electrical Engineering +15

Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN

Michael Wraback, H. Shen, John C. Carrano et al. · Applied Physics Letters · 2001 · 60 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Selective regrowth of Al0.30Ga0.70N <i>p–i–n</i> photodiodes

C. J. Collins, T. Li, Damien Lambert et al. · Applied Physics Letters · 2000 · 42 citations

Selective Regrowth, Wide-bandgap Semiconductor, Aluminium Nitride +18