A three-transistor threshold voltage model for halo processes

Abstract

A closed-form expression for the threshold voltage, V/sub t/, of MOSFETs fabricated with halo processes is described. The proposed approach accurately captures the length dependent V/sub t/ behavior under different drain and body bias conditions and temperature. In addition, the necessity of considering separate V/sub t/ expressions for current and capacitances is discussed. A doping transformation is employed to obtain equivalent channel dopings, necessary for charge-sheet models that do not rely on the threshold voltage concept.