2003 · 19 citations · 4 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignLow-power Digital Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsHigh-frequency ElectronicsHigh-frequency PerformanceHigh-speed Circuit DesignMicrowave Integrated Circuit DesignMillimeter-wave Integrated CircuitsPower Consumption
A divide-by 256/258 dual-modulus prescaler IC has been successfully fabricated using GaAs JFETs with a gate length of 0.5 mu m. The prescaler IC consists of nine flip-flops, two NOR gates, three OR gates, and three I/O buffers. These circuits were constructed using a three-level SCFL (source coupled FET logic) gate. A maximum operating frequency of 12 GHz was obtained with a power consumption of 2.2 W, including power for buffer circuits, which is the highest frequency for a dual-modulus prescaler IC to date.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A 4.5-GHz GaAs dual-modulus prescalar IC
M. Ohhata, T. Takada, M. Ino et al. · IEEE Transactions on Microwave Theory and Techniques · 1988 · 16 citations
Engineering, Computer Engineering, Electrical Engineering +17
GaAs J-FET formed by localized Zn diffusion
M. Dohsen, J. Kasahara, Yu Kato et al. · IEEE Electron Device Letters · 1981 · 10 citations