IEEE Electron Device Letters · 1986 · 15 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower DividersRadio-frequency Integrated CircuitsGaas Microwave Integrated CircuitsHigh-frequency ElectronicsHigh-speed Circuit DesignHigh-speed Logic DesignMonolithic Microwave Integrated Circuit Power DividersRadio-frequency Integrated Circuit Design
A GaAs one-fourth frequency divider is fabricated to evaluate the ultrahigh-speed performance of source-coupled FET logic (SCFL) having normally-on FET's with small negative V th values. High-transconductance (240 ms/mm) 1/2-µm gate-length FET's and an air-bridge interconnection line technology are successfully developed. A maximum toggle frequency F <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> of 11 GHz is achieved with a power dissipation of 149 mW. Furthermore, 9.7-GHz F <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> with low power dissipation of 52 mW was also obtained.
5