A 9-GHz frequency divider using Si bipolar super self-aligned process technology

Abstract

A very high-speed 1/8 frequency divider is fabricated, using Si bipolar super self-aligned process technology (SST), and tested. The circuit consists of three T-connected D-type master-slave flip-flops and buffers. A low voltage swing (225 mV) differential circuit technique is adopted for the first stage T-type flip-flop. The divider is capable of operating at up to 9 GHz with a power dissipation of 554 mW.