Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID–VG - Concepedia

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Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID–VG

39

Citations

13

References

2004

Year

A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, G. Groeseneken, H.E. Maes, Udo Schwalke

Microelectronic Engineering

Electrical EngineeringEngineeringStress-induced Leakage CurrentApplied PhysicsSio2/hfo2 Gate DielectricsCharge TransportSemiconductor Device

References

	Year	Citations

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